1/5 ? TN4035-600G 40a scrs april 2004 - ed: 3 main features: description the TN4035-600G is designed for applications where in-rush current conditions are critical, such as overvoltage crowbar protection circuits in power supplies. using clip assembly technology, provides higher fusing threshold than wires. mounting precautions detailled in application note an533 on www.st.com. symbol value unit i t(rms) 40 a v drm /v rrm 600 v i gt 35 ma g a k a a g k d 2 pak absolute ratings (limiting values) symbol parameter value unit i t(rms) rms on-state current (180 conduction angle) tc = 95c 40 a it (av) average on-state current (180 conduction angle) tc = 95c 25 a i tsm non repetitive surge peak on-state current tp = 8.3 ms tj = 25c 480 a tp = 10 ms 460 i 2 ti 2 t value for fusing tj = 25c 1060 a 2 s di/dt critical rate of rise of on-state current i g = 2 x i gt , tr 100 ns f = 60 hz tj = 125c 50 a/s i gm peak gate current tp = 20 s tj = 125c 4 a p g(av) average gate power dissipation tj = 125c 1 w t stg tj storage junction temperature range operating junction temperature range - 40 to + 150 - 40 to + 125 c v rgm maximum peak reverse gate voltage 5 v
TN4035-600G 2/5 electrical characteristics (tj = 25c, unless otherwise specified) thermal resistances * surface under tab/epoxy printed circuit board fr4, copper thickness 85m ordering information other information epoxy meets ul94, v0 symbol test conditions value unit i gt v d = 12 v r l = 33 ? min. 3.5 ma max. 35 v gt max. 1.3 v v gd v d = v drm r l = 3.3 k ? tj = 125c min. 0.2 v i h i t = 500 ma gate open max. 75 ma i l i g = 1.2 i gt max. 150 ma dv/dt v d = 67 % v drm gate open tj = 125c min. 1000 v/s v tm i tm = 80 a tp = 380 s tj = 25c max. 1.6 v v t0 threshold voltage tj = 125c max. 0.85 v r d dynamic resistance tj = 125c max. 10 m ? i drm i rrm v drm = v rrm tj = 25c max. 5 a tj = 125c 4 ma symbol parameter value unit r th(j-c) junction to case (dc) 0.8 c/w r th(j-a) junction to ambient (dc) s = 1cm 2 (*) 45 c/w part number marking weight base quantity packing mode TN4035-600G TN4035-600G 1.5 g 50 tube TN4035-600G-tr TN4035-600G 1.5 g 1000 tape & reel tn 40 35 - 600 g (-tr) current: 40a voltage: 600: 600v standard scr series sensitivity: 35: 35ma package: g: d pak 2 packing mode: blank: tube -tr: tape & reel
TN4035-600G 3/5 fig. 1: maximum average power dissipation versus average on-state current. fig. 2: average and dc on-state current versus case temperature. fig. 3: relative variation of thermal impedance versus pulse duration. fig. 4: relative variation of gate trigger current, holding current and latching current versus junction temperature. fig. 5: surge peak on-state current versus number of cycles. fig. 6: non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of i2t. 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 p(w) = 180 it(av)(a) 360 0 25 50 75 100 125 0 10 20 30 40 50 it(av)(a) d.c. = 180 tcase( c) 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 0.01 0.10 1.00 k = [zth/rth] zth(j-c) zth(j-a) tp(s) -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 igt,ih,il [tj] / igt,ih,il [tj = 25 c] igt ih & il tj(c) 1 10 100 1000 0 50 100 150 200 250 300 350 400 450 500 itsm(a) non repetitive tj initial = 25 c repetitive tcase = 95 c number of cycles one cycle tp = 10ms 0.01 0.10 1.00 10.00 100 1000 5000 itsm(a),i 2 t(a 2 s) tj initial = 25 c itsm i 2 t di/dt limitattion tp(ms)
TN4035-600G 4/5 fig. 7: on-state characteristics (maximum values). fig. 8: thermal resistance junction to ambient versus surface under tab (epoxy printed circuit board fr4, copper thickness: 35m) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 500 itm(a) tj = 25 c tj = tj max. tj max.: vto = 0.85v rd = 10m ? vtm(v) 0 10 20 30 40 50 60 70 80 0 1020304050 rth(j-a) (c/w) s(cm2)
TN4035-600G 5/5 package mechanical data d 2 pak jedec reference: to-263 ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.30 4.60 0.169 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.25 1.40 0.048 0.055 c 0.45 0.60 0.017 0.024 c2 1.21 1.36 0.047 0.054 d 8.95 9.35 0.352 0.368 e 10.00 10.28 0.393 0.405 g 4.88 5.28 0.192 0.208 l 15.00 15.85 0.590 0.624 l2 1.27 1.40 0.050 0.055 l3 1.40 1.75 0.055 0.069 r 0.40 0.016 v2 0 8 0 8 a c2 d r 2.0 min. flat zone a2 v2 c a1 g l l3 l2 b b2 e footprint dimensions (in millimeters) d 2 pa k ( p l a s ti c) 8 . 90 3.70 1.30 5.08 16.90 10.30 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states http://www.st.com
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